Yang, MH and Teo, KBK and Gangloff, L and Milne, WI and Hasko, DG and Robert, Y and Legagneux, P (2006) Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88. ISSN 0003-6951
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 20 Dec 2011 12:10 |
| Last Modified: | 20 May 2013 01:32 |
| DOI: |
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