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Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

Yang, MH and Teo, KBK and Gangloff, L and Milne, WI and Hasko, DG and Robert, Y and Legagneux, P (2006) Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88. ISSN 0003-6951

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:42
Last Modified: 17 Mar 2014 14:29
DOI:

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