Yang, MH and Teo, KBK and Milne, WI and Hasko, DG (2005) Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts. Applied Physics Letters, 87. pp. 1-3. ISSN 0003-6951Full text not available from this repository.
We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using a Pd contact (high-work-function metal) and an Al contact (low-work-function metal) at the two ends of a single-wall CNT. We show that it is possible to tune the rectification current-voltage (I-V) characteristics of the CNT through the use of a back gate. In contrast to standard back gate field-effect transistors (FET) using same-metal source drain contacts, the asymmetrically contacted CNT operates as a directionally dependent CNT FET when gated. While measuring at source-drain reverse bias, the device displays semiconducting characteristics whereas at forward bias, the device is nonsemiconducting. © 2005 American Institute of Physics.
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