CUED Publications database

Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts

Yang, MH and Teo, KBK and Milne, WI and Hasko, DG (2005) Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts. Applied Physics Letters, 87. pp. 1-3. ISSN 0003-6951

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Abstract

We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using a Pd contact (high-work-function metal) and an Al contact (low-work-function metal) at the two ends of a single-wall CNT. We show that it is possible to tune the rectification current-voltage (I-V) characteristics of the CNT through the use of a back gate. In contrast to standard back gate field-effect transistors (FET) using same-metal source drain contacts, the asymmetrically contacted CNT operates as a directionally dependent CNT FET when gated. While measuring at source-drain reverse bias, the device displays semiconducting characteristics whereas at forward bias, the device is nonsemiconducting. © 2005 American Institute of Physics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:28
Last Modified: 08 Dec 2014 02:12
DOI: 10.1063/1.2149991