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Semiconductor device provided by silicon carbide substrate and method for manufacturing the same

UNSPECIFIED Semiconductor device provided by silicon carbide substrate and method for manufacturing the same. doi:.

Full text not available from this repository.
Item Type: Patent
Additional Information: Applicant was = Denso Corp (JP) Also published as: US7154130 (B2), US2005006716 (A1), JP2004247496 (A), DE102004006537 (A1)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 28 Oct 2011 17:04
Last Modified: 16 Nov 2011 19:00
DOI:

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