UNSPECIFIED Semiconductor device provided by silicon carbide substrate and method for manufacturing the same. doi:.
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|Item Type: ||Patent|
|Additional Information: ||Applicant was = Denso Corp (JP) Also published as: US7154130 (B2), US2005006716 (A1), JP2004247496 (A), DE102004006537 (A1)|
|Divisions: ||Div B > Electronics, Power & Energy Conversion|
|Depositing User: ||Cron Job|
|Date Deposited: ||28 Oct 2011 17:04|
|Last Modified: ||16 Nov 2011 19:00|
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