CUED Publications database

Physics-based model of IGBT including MOS side two-dimensional effects

Lu, L and Bryant, AT and Santi, E and Hudgins, JL and Palmer, PR (2006) Physics-based model of IGBT including MOS side two-dimensional effects. In: 2006 IEEE Industry Applications Conference, 2006-10-8 to 2006-10-12, Tampa, FL, USA pp. 1457-1464..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 14:12
Last Modified: 05 Aug 2015 00:26
DOI: 10.1109/IAS.2006.256722