Lu, L and Bryant, AT and Santi, E and Hudgins, JL and Palmer, PR (2006) Physics-based model of IGBT including MOS side two-dimensional effects. In: 2006 IEEE Industry Applications Conference, 8-10-2006 to 12-10-2006, Tampa, FL, USA pp. 1457-1464..
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Additional Information: | Event type = conference ISSN: 0197-2618. IGBT: Insulated Gate Bipolar Transistor. |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:37 |
| Last Modified: | 30 Jan 2012 01:08 |
| DOI: | 10.1109/IAS.2006.256722 |
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