CUED Publications database

Physics-based model of IGBT including MOS side two-dimensional effects

Lu, L and Bryant, AT and Santi, E and Hudgins, JL and Palmer, PR (2006) Physics-based model of IGBT including MOS side two-dimensional effects. In: 2006 IEEE Industry Applications Conference, 2006-10-8 to 2006-10-12, Tampa, FL, USA pp. 1457-1464..

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:38
Last Modified: 02 Jun 2014 01:16
DOI: 10.1109/IAS.2006.256722