Mihalia, A and Udrea, F and Rashid, SJ and Godignon, P and Brosselard, P and Tournier, D and Millan, J and Amaratunga, GAJ (2006) High temperature characterization of 4H-SiC normally-on vertical JFETs with buried gate and buried field rings. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 2006-6-4 to 2006-6-8, Napoli, Italy pp. 161-164..Full text not available from this repository.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:23|
|Last Modified:||01 May 2015 19:22|