Mihalia, A and Udrea, F and Rashid, SJ and Godignon, P and Brosselard, P and Tournier, D and Millan, J and Amaratunga, GAJ (2006) High temperature characterization of 4H-SiC normally-on vertical JFETs with buried gate and buried field rings. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 4-6-2006 to 8-6-2006, Napoli, Italy pp. 161-164..
Full text not available from this repository.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Additional Information: | Event type = other |
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| Subjects: | UNSPECIFIED |
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| Divisions: | Div B > Electronics, Power & Energy Conversion |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 17:02 |
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| Last Modified: | 11 Mar 2013 01:59 |
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| DOI: | |
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