Mihalia, A and Udrea, F and Rashid, SJ and Godignon, P and Brosselard, P and Tournier, D and Millan, J and Amaratunga, GAJ (2006) High temperature characterization of 4H-SiC normally-on vertical JFETs with buried gate and buried field rings. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 2006-6-4 to 2006-6-8, Napoli, Italy pp. 161-164..Full text not available from this repository.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||09 Dec 2016 17:58|
|Last Modified:||21 Feb 2017 22:49|