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High temperature characterization of 4H-SiC normally-on vertical JFETs with buried gate and buried field rings

Mihalia, A and Udrea, F and Rashid, SJ and Godignon, P and Brosselard, P and Tournier, D and Millan, J and Amaratunga, GAJ (2006) High temperature characterization of 4H-SiC normally-on vertical JFETs with buried gate and buried field rings. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 2006-6-4 to 2006-6-8, Napoli, Italy pp. 161-164..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
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Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:51
Last Modified: 03 Sep 2015 08:34
DOI: