Mihalia, A and Udrea, F and Rashid, SJ and Godignon, P and Brosselard, P and Tournier, D and Millan, J and Amaratunga, GAJ (2006) High temperature characterization of 4H-SiC normally-on vertical JFETs with buried gate and buried field rings. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD '06), 4-6-2006 to 8-6-2006, Napoli, Italy pp. 161-164..
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|Item Type: ||Conference or Workshop Item (UNSPECIFIED)|
|Additional Information: ||Event type = other|
|Divisions: ||Div B > Electronics, Power & Energy Conversion|
|Depositing User: ||Cron Job|
|Date Deposited: ||28 Oct 2011 17:02|
|Last Modified: ||11 Mar 2013 01:59|
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