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A complete isothermal model for the lateral insulated gate bipolar transistor on SOI technology

Pathirana, V and Napoli, E and Gamage, S and Udrea, F (2005) A complete isothermal model for the lateral insulated gate bipolar transistor on SOI technology. In: TENCON 2005, the IEEE Region 10 Conference, -11-2005 to -- pp. 179-184..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: Event type = conference Conference held in Melbourne, Australia, November 2005. Conference item published as a book section.
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 28 Oct 2011 17:02
Last Modified: 11 Mar 2013 01:54
DOI:

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