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Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same

UNSPECIFIED Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same. doi:.

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Item Type: Patent
Additional Information: Applicant was = Kumar, R. et al. Also published as: US7005678 (B2), JP2005150352 (A)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 28 Oct 2011 17:01
Last Modified: 16 Nov 2011 19:00
DOI:

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