Napoli, E and Pathirana, V and Udrea, F (2005) Accurate physical model for the lateral IGBT in silicon on insulator technology. In: The International Symposium on Industrial Electronics, ISIE 2005, -6-2005 to --, Dubrovnik, Croatia pp. 457-462..
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Additional Information: | Event type = other |
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| Subjects: | UNSPECIFIED |
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| Divisions: | Div B > Electronics, Power & Energy Conversion |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 17:01 |
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| Last Modified: | 11 Mar 2013 01:47 |
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| DOI: | |
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