Caiafa, A and Snezhko, A and Hudgins, JL and Santi, E and Prozorov, R and Palmer, PR (2004) Physics-based modeling of NPT and PT IGBTs at deep cryogenic temperatures. In: 2004 IEEE Industry Applications Conference. 39th IAS Annual Meeting, 3-10-2004 to 7-10-2004, Seattle, WA, USA pp. 2536-2541..
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Additional Information: | Event type = conference IGBT: Insulated Gate Bipolar Transistor. |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:37 |
| Last Modified: | 30 Jan 2012 01:08 |
| DOI: | 10.1109/IAS.2004.1348831 |
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