Kang, X and Wang, X and Lu, L and Santi, E and Hudgins, JL and Palmer, PR (2003) Physical modeling of IGBT turn on behavior. In: 2003 IEEE Industry Applications Conference 38th IAS Annual Meeting, 12-10-2003 to 16-10-2003, Salt Lake City, OH, USA pp. 988-994..
Full text not available from this repository.
|Item Type: ||Conference or Workshop Item (UNSPECIFIED)|
|Additional Information: ||Event type = conference IGBT: Insulated Gate Bipolar Transistor.|
|Divisions: ||Div B > Electronics, Power & Energy Conversion|
|Depositing User: ||Cron Job|
|Date Deposited: ||28 Oct 2011 16:37|
|Last Modified: ||20 May 2013 10:11|
Actions (login required)