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Buried field rings - a novel edge termination method for 4H-SiC high voltage devices

Mihalia, A and Udrea, F and Godignon, P and Trajkovic, T and Brezeanu, G and Rusu, A and Rebello, J and Millan, J (2002) Buried field rings - a novel edge termination method for 4H-SiC high voltage devices. In: The 25th IEEE International Semiconductor Conference, 2002-10- to --, Sinaia, Romania pp. 245-248..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:58
Last Modified: 10 Mar 2014 16:33
DOI:

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