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Memory device having p- and n-channel ferroelectric transistors

UNSPECIFIED Memory device having p- and n-channel ferroelectric transistors. doi:.

Full text not available from this repository.
Item Type: Patent
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 09 Dec 2016 18:37
Last Modified: 27 May 2017 21:48
DOI: