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Memory device having p- and n-channel ferroelectric transistors

UNSPECIFIED Memory device having p- and n-channel ferroelectric transistors. doi:.

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Item Type: Patent
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 02 Sep 2016 18:01
Last Modified: 29 Sep 2016 08:48
DOI: