UNSPECIFIED Memory device having p- and n-channel ferroelectric transistors. GB2362990.
Full text not available from this repository.| Item Type: | Patent |
|---|---|
| Additional Information: | Applicant was = Seiko Epson Corp. (JP) Also published as: US6498742 (B2), US2002004875 (A1), JP2002100744 (A) |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Photonics |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:57 |
| Last Modified: | 30 Jan 2012 01:07 |
| DOI: | GB2362990 |
Actions (login required)
| View Item |
