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Memory device having p- and n-channel ferroelectric transistors

UNSPECIFIED Memory device having p- and n-channel ferroelectric transistors. doi:.

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Item Type: Patent
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron job
Date Deposited: 16 Jul 2015 14:42
Last Modified: 26 Jul 2015 03:06
DOI: