Rashid, R and Flewitt, AJ and Robertson, J and Milne, WI (2001) Low temperature growth of high quality SiO2 at less that 100oC by ECR-PECVD for TFTs. In: The 1st International Semiconductor Technology Conference, -5-2001 to --, Shanghai, China pp. 185-195..
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|Item Type: ||Conference or Workshop Item (UNSPECIFIED)|
|Additional Information: ||Event type = conference|
|Depositing User: ||Cron Job|
|Date Deposited: ||28 Oct 2011 16:57|
|Last Modified: ||13 Feb 2012 01:30|
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