Rashid, R and Flewitt, AJ and Robertson, J and Milne, WI (2001) Low temperature growth of high quality SiO2 at less that 100oC by ECR-PECVD for TFTs. In: The 1st International Semiconductor Technology Conference, -5-2001 to --, Shanghai, China pp. 185-195..
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Additional Information: | Event type = conference |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:57 |
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| Last Modified: | 13 Feb 2012 01:30 |
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| DOI: | |
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