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Low temperature growth of high quality SiO2 at less that 100oC by ECR-PECVD for TFTs

Rashid, R and Flewitt, AJ and Robertson, J and Milne, WI (2001) Low temperature growth of high quality SiO2 at less that 100oC by ECR-PECVD for TFTs. In: The 1st International Semiconductor Technology Conference, 2001-5- to --, Shanghai, China pp. 185-195..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:15
Last Modified: 29 Jul 2015 01:27
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