Rashid, R and Flewitt, AJ and Robertson, J and Milne, WI (2001) High quality growth of SiO2 at 80oC by electron cyclotron resonance (ECR) for thin film transistors. In: Advanced Materials and Devices for Large-Area Electronics Symposium, -4-2001 to --, San Francisco, CA, US pp. 335-340..
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Additional Information: | Event type = conference |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:57 |
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| Last Modified: | 13 Feb 2012 01:30 |
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| DOI: | |
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