CUED Publications database

High quality growth of SiO2 at 80oC by electron cyclotron resonance (ECR) for thin film transistors

Rashid, R and Flewitt, AJ and Robertson, J and Milne, WI (2001) High quality growth of SiO2 at 80oC by electron cyclotron resonance (ECR) for thin film transistors. In: Advanced Materials and Devices for Large-Area Electronics Symposium, 2001-4- to --, San Francisco, CA, US pp. 335-340..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:36
Last Modified: 06 Oct 2014 01:23
DOI: