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High quality growth of SiO2 at 80oC by electron cyclotron resonance (ECR) for thin film transistors

Rashid, R and Flewitt, AJ and Robertson, J and Milne, WI (2001) High quality growth of SiO2 at 80oC by electron cyclotron resonance (ECR) for thin film transistors. In: Advanced Materials and Devices for Large-Area Electronics Symposium, 2001-4- to --, San Francisco, CA, US pp. 335-340..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
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Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:15
Last Modified: 30 Jul 2015 06:36
DOI: