Rashid, R and Flewitt, AJ and Robertson, J and Milne, WI (2001) High quality growth of SiO2 at 80oC by electron cyclotron resonance (ECR) for thin film transistors. In: Advanced Materials and Devices for Large-Area Electronics Symposium, -4-2001 to --, San Francisco, CA, US pp. 335-340..
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|Item Type: ||Conference or Workshop Item (UNSPECIFIED)|
|Additional Information: ||Event type = conference|
|Depositing User: ||Cron Job|
|Date Deposited: ||28 Oct 2011 16:57|
|Last Modified: ||13 Feb 2012 01:30|
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