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Accurate modelling of Ni/6H-SiC Schottky barrier diodes (SBD) forward characteristics at high current densities

Brezeanu, G and Badila, M and Tudor, B and Millan, J and Godignon, P and Locatelli, ML and Chante, JP and Amaratunga, GAJ and Udrea, F and Mihaila, A (2000) Accurate modelling of Ni/6H-SiC Schottky barrier diodes (SBD) forward characteristics at high current densities. In: The 23rd International Semiconductor Conference; CAS 2000, 2000-10- to --, Sinaia, Romania pp. 193-196..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:48
Last Modified: 10 Mar 2014 16:09
DOI:

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