Ng, R and Udrea, F (2000) Reverse doped structure for high breakdown voltages and low on-resistance in SOI power devices. In: The 5th International Symposium on Power Semiconductors, ISPS' 00, 2000-9- to --, Prague, Czech Republic pp. 157-161..
Full text not available from this repository.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Additional Information: | Event type = other |
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| Subjects: | UNSPECIFIED |
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| Divisions: | Div B > Electronics, Power & Energy Conversion |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:56 |
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| Last Modified: | 16 Nov 2011 19:00 |
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| DOI: | |
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