Csanyi, G (2000) New physics of the 30 degree partial dislocation in Silicon. In: EDS 2000, 2000-8-24 to --, Brighton, Great Britain.
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Subjects: | UNSPECIFIED |
| Divisions: | Div C > Applied Mechanics |
| Depositing User: | Cron Job |
| Date Deposited: | 17 Jul 2017 19:39 |
| Last Modified: | 25 Jul 2017 06:11 |
| DOI: |
