Csanyi, G and Engeness, TD and Ismail Beigi, S and Arias, TA (2000) New physics of the 30 degree partial dislocation in silicon. In: EDS 2000, 24-8-2000 to --, Brighton, Great Britain pp. 10029-10038..
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Additional Information: | Event type = conference |
| Subjects: | UNSPECIFIED |
| Divisions: | Div C > Materials Engineering Div C > Applied Mechanics |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:39 |
| Last Modified: | 27 Nov 2013 19:14 |
| DOI: | 10.1088/0953-8984/12/49/302 |
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