Csanyi, G (2000) New physics of the 30 degree partial dislocation in Silicon. In: EDS 2000, 24-8-2000 to --, Brighton, Great Britain.
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Additional Information: | Event type = conference |
| Subjects: | UNSPECIFIED |
| Divisions: | Div C > Materials Engineering |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:39 |
| Last Modified: | 15 Nov 2011 10:22 |
| DOI: |
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