Csanyi, G (2000) New physics of the 30 degree partial dislocation in Silicon. In: EDS 2000, 2000-8-24 to --, Brighton, Great Britain.
Full text not available from this repository.Item Type: | Conference or Workshop Item (UNSPECIFIED) |
---|---|
Subjects: | UNSPECIFIED |
Divisions: | Div C > Applied Mechanics |
Depositing User: | Cron Job |
Date Deposited: | 17 Jul 2017 19:39 |
Last Modified: | 18 Feb 2021 15:50 |
DOI: |