Morgan, P and Milne, WI and Deane, SC and Powell, MJ (1994) The kinetics of removal of defects in a-Si:H TFTs made with PECVD oxide gate insulator material. In: The MRS Spring Meeting: Symposium on Amorphous Silicon Technology, -4-1994 to -- pp. 811-816..
Full text not available from this repository.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Additional Information: | Event type = other Conference held in San Francisco; CA, April 1994. Edited by Schiff, E. A. Series ISSN: 0272-9172 Conference item published as a book section. |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:52 |
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| Last Modified: | 11 Mar 2013 02:01 |
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| DOI: | |
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