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The kinetics of removal of defects in a-Si:H TFTs made with PECVD oxide gate insulator material

Morgan, P and Milne, WI and Deane, SC and Powell, MJ (1994) The kinetics of removal of defects in a-Si:H TFTs made with PECVD oxide gate insulator material. In: The MRS Spring Meeting: Symposium on Amorphous Silicon Technology, 1994-4- to -- pp. 811-816..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:54
Last Modified: 05 May 2014 01:10
DOI:

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