Morgan, P and Milne, WI and Deane, SC and Powell, MJ (1994) The kinetics of removal of defects in a-Si:H TFTs made with PECVD oxide gate insulator material. In: The MRS Spring Meeting: Symposium on Amorphous Silicon Technology, -4-1994 to -- pp. 811-816..
Full text not available from this repository.
|Item Type: ||Conference or Workshop Item (UNSPECIFIED)|
|Additional Information: ||Event type = other Conference held in San Francisco; CA, April 1994. Edited by Schiff, E. A. Series ISSN: 0272-9172 Conference item published as a book section.|
|Depositing User: ||Cron Job|
|Date Deposited: ||28 Oct 2011 16:52|
|Last Modified: ||11 Mar 2013 02:01|
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