S, P and Can, Z and C, D and S, H and J, R (2008) Enhanced subthreshold slopes in large diameter single wall carbon nanotube field effect transistors. IEEE Transactions on Nanotechnology, 7. pp. 458-462. ISSN 1536-125XFull text not available from this repository.
|Uncontrolled Keywords:||field effect transistor (FET); ohmic contact; Schottky barrier; single wall carbon nanotube (SWNT)|
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||02 Sep 2016 16:31|
|Last Modified:||27 Sep 2016 23:21|