CUED Publications database

Enhanced subthreshold slopes in large diameter single wall carbon nanotube field effect transistors

S, P and Can, Z and C, D and S, H and J, R (2008) Enhanced subthreshold slopes in large diameter single wall carbon nanotube field effect transistors. IEEE Transactions on Nanotechnology, 7. pp. 458-462. ISSN 1536-125X

Full text not available from this repository.
Item Type: Article
Uncontrolled Keywords: field effect transistor (FET); ohmic contact; Schottky barrier; single wall carbon nanotube (SWNT)
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 14:35
Last Modified: 02 Aug 2015 21:50
DOI: 10.1109/TNANO.2008.917849