Xiong, K and Du, Y and Tse, K and Robertson, J (2007) Defect states in the high-dielectric-constant gate oxide HfSiO4. Journal of Applied Physics, 101. ISSN 0021-8979
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:48 |
| Last Modified: | 06 May 2013 01:05 |
| DOI: | 10.1063/1.2409662 |
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