CUED Publications database

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

Yang, MH and Teo, KBK and Gangloff, L and Hasko, DG and Milne, WI (2006) Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88. 113507-. ISSN 0003-6951

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:15
Last Modified: 05 Aug 2015 01:40
DOI: 10.1063/1.2186100