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Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

Yang, MH and Teo, KBK and Gangloff, L and Hasko, DG and Milne, WI (2006) Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88. 113507-. ISSN 0003-6951

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:52
Last Modified: 06 Oct 2014 01:23
DOI: 10.1063/1.2186100

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