CUED Publications database

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

Yang, MH and Teo, KBK and Gangloff, L and Hasko, DG and Milne, WI (2006) Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88. 113507-. ISSN 0003-6951

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 15 Dec 2015 13:14
Last Modified: 04 May 2016 05:34
DOI: 10.1063/1.2186100