Robertson, J (2006) High dielectric constant gate oxides for metal oxide Si transistors. Reports on Progress in Physics, 69. pp. 327-396. ISSN 0034-4885
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:47 |
| Last Modified: | 20 May 2013 01:31 |
| DOI: | 10.1088/0034-4885/69/2/R02 |
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