Robertson, J (2006) High dielectric constant gate oxides for metal oxide Si transistors. Reports on Progress in Physics, 69. pp. 327-396. ISSN 0034-4885
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Solid State Electronics and Nanoscale Science |
| Depositing User: | Cron Job |
| Date Deposited: | 17 Jul 2017 18:58 |
| Last Modified: | 14 Jun 2018 01:52 |
| DOI: |
