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High dielectric constant gate oxides for metal oxide Si transistors

Robertson, J (2006) High dielectric constant gate oxides for metal oxide Si transistors. Reports on Progress in Physics, 69. pp. 327-396. ISSN 0034-4885

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:27
Last Modified: 06 Oct 2014 01:18
DOI: 10.1088/0034-4885/69/2/R02

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