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High dielectric constant gate oxides for metal oxide Si transistors

Robertson, J (2006) High dielectric constant gate oxides for metal oxide Si transistors. Reports on Progress in Physics, 69. pp. 327-396. ISSN 0034-4885

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:04
Last Modified: 24 May 2015 10:54
DOI: 10.1088/0034-4885/69/2/R02