Robertson, J (2006) High dielectric constant gate oxides for metal oxide Si transistors. Reports on Progress in Physics, 69. pp. 327-396. ISSN 0034-4885
Full text not available from this repository.Item Type: | Article |
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Subjects: | UNSPECIFIED |
Divisions: | Div B > Solid State Electronics and Nanoscale Science |
Depositing User: | Cron Job |
Date Deposited: | 17 Jul 2017 18:58 |
Last Modified: | 19 Apr 2018 02:45 |
DOI: |