CUED Publications database

Normally-off trench JFET technology in 4H silicon carbide

Malhan, RK and Takeeuchi, M and Kataoka, M and Mihaila, A and Rashid, SJ and Udrea, F and Amaratunga, GAJ (2006) Normally-off trench JFET technology in 4H silicon carbide. Microelectronic Engineering, 83. pp. 107-111. ISSN 0167-9317

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 18 May 2016 18:38
Last Modified: 30 May 2016 03:06
DOI: 10.1016/j.mee.2005.10.035