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Normally-off trench JFET technology in 4H silicon carbide

Malhan, RK and Takeeuchi, M and Kataoka, M and Mihaila, A and Rashid, SJ and Udrea, F and Amaratunga, GAJ (2006) Normally-off trench JFET technology in 4H silicon carbide. Microelectronic Engineering, 83. pp. 107-111. ISSN 0167-9317

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:09
Last Modified: 10 Mar 2014 16:09
DOI: 10.1016/j.mee.2005.10.035

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