CUED Publications database

Normally-off trench JFET technology in 4H silicon carbide

Malhan, RK and Takeeuchi, M and Kataoka, M and Mihaila, A and Rashid, SJ and Udrea, F and Amaratunga, GAJ (2006) Normally-off trench JFET technology in 4H silicon carbide. Microelectronic Engineering, 83. pp. 107-111. ISSN 0167-9317

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 04 Feb 2015 23:24
Last Modified: 05 Feb 2015 01:45
DOI: 10.1016/j.mee.2005.10.035