Napoli, E and Udrea, F (2006) Substrate engineering for improved transient breakdown voltage in SOI lateral power MOS. IEE Electron Device Letters, 27. pp. 678-680. ISSN 0741-3106
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:46 |
| Last Modified: | 20 May 2013 01:37 |
| DOI: |
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