Yan, F and Migliorato, P and Hong, Y and Rana, V and Ishihara, R and Hiroshima, Y and Abe, D and Inoue, S and Shimoda, T (2005) Gate oxide induced switch-on undershoot current observed in thin-film transistors. Applied Physics Letters, 86. ISSN 0003-6951
Full text not available from this repository.
| Item Type: | Article |
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| Additional Information: | 3 pages, from 253504-1 to 253504-3. |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:46 |
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| Last Modified: | 11 Mar 2013 01:48 |
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| DOI: | 10.1063/1.1954896 |
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