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Point defects in HfO2 high K gate oxide

Xiong, K and Robertson, J (2005) Point defects in HfO2 high K gate oxide. Microelectronic Engineering, 80. pp. 408-411. ISSN 0167-9317

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:37
Last Modified: 07 Apr 2014 01:18
DOI: 10.1016/j.mee.2005.04.098

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