CUED Publications database

Point defects in HfO2 high K gate oxide

Xiong, K and Robertson, J (2005) Point defects in HfO2 high K gate oxide. Microelectronic Engineering, 80. pp. 408-411. ISSN 0167-9317

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 09 Dec 2016 17:48
Last Modified: 29 Mar 2017 23:46
DOI: