Lin, S and Flewitt, AJ and Milne, WI and Wehrspohn, RB and Powell, MJ (2005) The stability of fully deuterated amorphous silicon thin film transistors. Applied Physics Letters, 86. 063513-. ISSN 0003-6951
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:46 |
| Last Modified: | 11 Mar 2013 01:49 |
| DOI: | 10.1063/1.1862755 |
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