CUED Publications database

Fermi level pinning and Hf-Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces

Xiong, K and Peacock, PW and Robertson, J (2005) Fermi level pinning and Hf-Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces. Applied Physics Letters, 86. 012904-. ISSN 0003-6951

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:38
Last Modified: 08 Dec 2014 02:24
DOI: 10.1063/1.1844611