CUED Publications database

Atomic structure, band offsets, growth and defects at High-K oxide Si interfaces

Robertson, J and Peacock, PW (2004) Atomic structure, band offsets, growth and defects at High-K oxide Si interfaces. Microelectronic Engineering, 72. pp. 112-120. ISSN 0167-9317

Full text not available from this repository.
Item Type: Article
Additional Information: This journal contains the Proceedings of the 13th Biennial Conference on Insulating Films on Semiconductors held in Barcelona, 18 - 20 June 2003. Edited by Joan Ramon Morante Lleonart
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 28 Oct 2011 16:45
Last Modified: 20 May 2013 01:40
DOI: 10.1016/j.mee.2003.12.026

Actions (login required)

View Item