CUED Publications database

Atomic structure, band offsets, growth and defects at High-K oxide Si interfaces

Robertson, J and Peacock, PW (2004) Atomic structure, band offsets, growth and defects at High-K oxide Si interfaces. Microelectronic Engineering, 72. pp. 112-120. ISSN 0167-9317

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 09 Dec 2016 17:42
Last Modified: 25 Feb 2017 00:06
DOI: