CUED Publications database

Atomic structure, band offsets, growth and defects at High-K oxide Si interfaces

Robertson, J and Peacock, PW (2004) Atomic structure, band offsets, growth and defects at High-K oxide Si interfaces. Microelectronic Engineering, 72. pp. 112-120. ISSN 0167-9317

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 15 Dec 2015 13:24
Last Modified: 14 Feb 2016 02:38
DOI: 10.1016/j.mee.2003.12.026