Robertson, J and Peacock, PW (2004) Atomic structure, band offsets, growth and defects at High-K oxide Si interfaces. Microelectronic Engineering, 72. pp. 112-120. ISSN 0167-9317Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||09 Dec 2016 17:42|
|Last Modified:||25 Apr 2017 21:53|