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Bonding, energies, and band offsets of Si–ZrO2 and HfO2 gate oxide interfaces

Peacock, PW and Robertson, J (2004) Bonding, energies, and band offsets of Si–ZrO2 and HfO2 gate oxide interfaces. Physical Review Letters, 92. 057601-. ISSN 0031-9007

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:25
Last Modified: 14 Jul 2014 01:07
DOI: 10.1103/PhysRevLett.92.057601

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