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Bonding, energies, and band offsets of Si–ZrO2 and HfO2 gate oxide interfaces

Peacock, PW and Robertson, J (2004) Bonding, energies, and band offsets of Si–ZrO2 and HfO2 gate oxide interfaces. Physical Review Letters, 92. 057601-. ISSN 0031-9007

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:06
Last Modified: 27 Apr 2015 01:18
DOI: 10.1103/PhysRevLett.92.057601