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Bonding, energies, and band offsets of Si–ZrO2 and HfO2 gate oxide interfaces

Peacock, PW and Robertson, J (2004) Bonding, energies, and band offsets of Si–ZrO2 and HfO2 gate oxide interfaces. Physical Review Letters, 92. 057601-. ISSN 0031-9007

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 18 May 2016 17:48
Last Modified: 28 Aug 2016 22:20
DOI: