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Bonding, energies, and band offsets of Si–ZrO2 and HfO2 gate oxide interfaces

Peacock, PW and Robertson, J (2004) Bonding, energies, and band offsets of Si–ZrO2 and HfO2 gate oxide interfaces. Physical Review Letters, 92. 057601-. ISSN 0031-9007

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 02 Sep 2016 16:34
Last Modified: 01 Oct 2016 21:33
DOI: