CUED Publications database

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

Yokoyama, Y and Li, X and Sheng, K and Mihaila, A and Traikovic, T and Udrea, F and Amaratunga, GAJ and Okano, K (2003) A field effect transistor using highly nitrogen-doped CVD diamond for power device applications. Applied Surface Science, 216. pp. 483-489. ISSN 0169-4332

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:28
Last Modified: 01 May 2015 19:26
DOI: 10.1016/S0169-4332(03)00402-1