Yokoyama, Y and Li, X and Sheng, K and Mihaila, A and Traikovic, T and Udrea, F and Amaratunga, GAJ and Okano, K (2003) A field effect transistor using highly nitrogen-doped CVD diamond for power device applications. Applied Surface Science, 216. pp. 483-489. ISSN 0169-4332
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:45 |
| Last Modified: | 20 May 2013 01:38 |
| DOI: | 10.1016/S0169-4332(03)00402-1 |
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