Yokoyama, Y and Li, X and Sheng, K and Mihaila, A and Traikovic, T and Udrea, F and Amaratunga, GAJ and Okano, K (2003) A field effect transistor using highly nitrogen-doped CVD diamond for power device applications. Applied Surface Science, 216. pp. 483-489. ISSN 0169-4332Full text not available from this repository.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||02 Sep 2016 16:46|
|Last Modified:||29 Sep 2016 03:39|