CUED Publications database

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

Yokoyama, Y and Li, X and Sheng, K and Mihaila, A and Traikovic, T and Udrea, F and Amaratunga, GAJ and Okano, K (2003) A field effect transistor using highly nitrogen-doped CVD diamond for power device applications. Applied Surface Science, 216. pp. 483-489. ISSN 0169-4332

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 15 Dec 2015 13:23
Last Modified: 07 Feb 2016 23:21
DOI: 10.1016/S0169-4332(03)00402-1