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Physical and electrical properties of low temperature (100C) SiO2 films deposited by electron cyclotron resonance plasmas

Rashid, R and Flewitt, AJ and Robertson, J (2003) Physical and electrical properties of low temperature (100C) SiO2 films deposited by electron cyclotron resonance plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 21. pp. 728-739. ISSN 0734-2101

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:48
Last Modified: 29 Aug 2015 21:51
DOI: 10.1116/1.1562179