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Physical and electrical properties of low temperature (100C) SiO2 films deposited by electron cyclotron resonance plasmas

Rashid, R and Flewitt, AJ and Robertson, J (2003) Physical and electrical properties of low temperature (100C) SiO2 films deposited by electron cyclotron resonance plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 21. pp. 728-739. ISSN 0734-2101

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:37
Last Modified: 05 May 2014 01:09
DOI: 10.1116/1.1562179

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