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Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process

Yuan, X and Trajkovic, T and Udrea, F and Thomson, J and Waind, PR and Taylor, P and Amaratunga, GAJ (2002) Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process. Solid State Electronics, 46. pp. 1907-1912. ISSN 0038-1101

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 28 Oct 2011 16:44
Last Modified: 16 May 2013 19:23
DOI: 10.1016/S0038-1101(02)00132-6

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