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Extraction of trap states at the oxide-Silicon interface and grain boundary in polycrystalline Silicon thin-film transistors

Kimura, M and Nozawa, R and Inoue, S and Shimoda, T and Lui, BOK and Tam, SWB and Migliorato, P (2001) Extraction of trap states at the oxide-Silicon interface and grain boundary in polycrystalline Silicon thin-film transistors. Japanese Journal of Applied Physics, 40. pp. 112-113. ISSN 0021-4922

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Item Type: Article
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Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 14:04
Last Modified: 25 Jul 2015 23:47
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