Csanyi, G and Engeness, TD and Ismail Beigi, S and Arias, TA (2000) New physics of the 30 degree partial dislocation in silicon. Journal of Physics: Condensed Matter, 12. pp. 10029-10038. ISSN 0953-8984
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | Div C > Materials Engineering |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:39 |
| Last Modified: | 18 Jun 2012 01:13 |
| DOI: | 10.1088/0953-8984/12/49/302 |
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