Flewitt, AJ and Robertson, J and Milne, WI (1999) Growth mechanism of hydrogenated amorphous silicon studied by in situ scanning tunneling microscopy. Journal of Applied Physics, 85. pp. 8032-8039. ISSN 0021-8979Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||18 May 2016 18:25|
|Last Modified:||28 Aug 2016 22:21|