Flewitt, AJ and Robertson, J and Milne, WI (1999) Growth mechanism of hydrogenated amorphous silicon studied by in situ scanning tunneling microscopy. Journal of Applied Physics, 85. pp. 8032-8039. ISSN 0021-8979Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
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|Date Deposited:||15 Dec 2015 12:57|
|Last Modified:||06 May 2016 23:39|