Palmer, PR and Hinchley, DA and Stark, BH (1998) MOS and bipolar gated thyristor: a thyristor with IGBT switching characteristics. IEE Proceedings on Circuits, Devices and Systems, 145. pp. 105-110. ISSN 1350-2409
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| Item Type: | Article |
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| Additional Information: | Publisher: Institution of Electrical Engineers, Great Britain. IGBT: Insulated Gate Bipolar Transistor |
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| Subjects: | UNSPECIFIED |
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| Divisions: | Div B > Electronics, Power & Energy Conversion |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:37 |
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| Last Modified: | 20 May 2013 01:37 |
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| DOI: | |
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