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The effects of process pressure and microwave power on the properties of boron-doped SiC:H films prepared using the ECR-CVD technique

Yoon, SF and Ji, R and Ahn, J and Milne, WI (1996) The effects of process pressure and microwave power on the properties of boron-doped SiC:H films prepared using the ECR-CVD technique. Diamond and Related Materials, 5. pp. 1371-1377. ISSN 0925-9635

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:35
Last Modified: 06 Oct 2014 01:24
DOI: