Yoon, SF and Ji, R and Ahn, J and Milne, WI (1996) The effects of process pressure and microwave power on the properties of boron-doped SiC:H films prepared using the ECR-CVD technique. Diamond and Related Materials, 5. pp. 1371-1377. ISSN 0925-9635Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||18 May 2016 19:10|
|Last Modified:||27 Jun 2016 03:06|