Yoon, SF and Ji, R and Ahn, J and Milne, WI (1996) The effects of process pressure and microwave power on the properties of boron-doped SiC:H films prepared using the ECR-CVD technique. Diamond and Related Materials, 5. pp. 1371-1377. ISSN 0925-9635Full text not available from this repository.
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:29|
|Last Modified:||05 Feb 2015 00:40|