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Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

Clough, FJ and Brown, AO and Ekkanath Madathil, SN and Milne, WI (1995) Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications. Thin Solid Films, 270. pp. 517-521. ISSN 0040-6090

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 09 Dec 2016 18:51
Last Modified: 28 Mar 2017 23:46
DOI: