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Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

Clough, FJ and Brown, AO and Ekkanath Madathil, SN and Milne, WI (1995) Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications. Thin Solid Films, 270. pp. 517-521. ISSN 0040-6090

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 04 Feb 2015 23:15
Last Modified: 05 Feb 2015 01:34
DOI: 10.1016/0040-6090(95)06834-1