CUED Publications database

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

Clough, FJ and Brown, AO and Ekkanath Madathil, SN and Milne, WI (1995) Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications. Microelectronic Engineering, 28. pp. 451-454. ISSN 0167-9317

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:34
Last Modified: 30 Sep 2014 19:13
DOI: 10.1016/0167-9317(95)00095-P

Actions (login required)

View Item