Clough, FJ and Brown, AO and Ekkanath Madathil, SN and Milne, WI (1995) Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications. Microelectronic Engineering, 28. pp. 451-454. ISSN 0167-9317Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||18 May 2016 19:15|
|Last Modified:||31 Aug 2016 02:55|