Clough, FJ and Brown, AO and Ekkanath Madathil, SN and Milne, WI (1995) Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications. Microelectronic Engineering, 28. pp. 451-454. ISSN 0167-9317
Full text not available from this repository.
| Item Type: | Article |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:42 |
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| Last Modified: | 27 May 2013 01:20 |
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| DOI: | 10.1016/0167-9317(95)00095-P |
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