Deane, SC and Milne, WI and Clough, F and Powell, MJ (1993) The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics. Journal of Applied Physics, 73. pp. 2895-2901. ISSN 0021-8979
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:41 |
| Last Modified: | 27 May 2013 01:20 |
| DOI: | 10.1063/1.353019 |
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