Deane, SC and Milne, WI and Clough, F and Powell, MJ (1993) The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics. Journal of Applied Physics, 73. pp. 2895-2901. ISSN 0021-8979Full text not available from this repository.
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:22|
|Last Modified:||07 May 2015 01:26|