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The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics

Deane, SC and Milne, WI and Clough, F and Powell, MJ (1993) The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics. Journal of Applied Physics, 73. pp. 2895-2901. ISSN 0021-8979

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:34
Last Modified: 27 Nov 2014 19:21
DOI: 10.1063/1.353019