Deane, SC and Milne, WI and Clough, F and Powell, MJ (1993) The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics. Journal of Applied Physics, 73. pp. 2895-2901. ISSN 0021-8979Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:45|
|Last Modified:||04 May 2016 05:34|