Deane, SC and Milne, WI and Clough, F and Powell, MJ (1993) The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics. Journal of Applied Physics, 73. pp. 2895-2901. ISSN 0021-8979Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
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|Date Deposited:||15 Dec 2015 12:45|
|Last Modified:||13 Feb 2016 22:29|