Gimzewski, JK and Berndt, R and Schittler, R and McKinnon, AW and Welland, ME and Wong, TMH and Dumas, P and Gu, R and Syarkh, S and Salvan, F and Hallimaoui, A (1993) Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy. Applied Physics Letters, 62. pp. 786-788. ISSN 0003-6951
Full text not available from this repository.
| Item Type: | Article |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:41 |
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| Last Modified: | 11 Mar 2013 01:48 |
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| DOI: | |
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