Gimzewski, JK and Berndt, R and Schittler, R and McKinnon, AW and Welland, ME and Wong, TMH and Dumas, P and Gu, R and Syarkh, S and Salvan, F and Hallimaoui, A (1993) Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy. Applied Physics Letters, 62. pp. 786-788. ISSN 0003-6951Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:34|
|Last Modified:||08 Sep 2014 01:10|
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