Gimzewski, JK and Berndt, R and Schittler, R and McKinnon, AW and Welland, ME and Wong, TMH and Dumas, P and Gu, R and Syarkh, S and Salvan, F and Hallimaoui, A (1993) Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy. Applied Physics Letters, 62. pp. 786-788. ISSN 0003-6951Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||09 Dec 2016 17:28|
|Last Modified:||22 Jan 2017 22:29|