Gimzewski, JK and Berndt, R and Schittler, R and McKinnon, AW and Welland, ME and Wong, TMH and Dumas, P and Gu, R and Syarkh, S and Salvan, F and Hallimaoui, A (1993) Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy. Applied Physics Letters, 62. pp. 786-788. ISSN 0003-6951
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|Item Type: ||Article|
|Depositing User: ||Cron Job|
|Date Deposited: ||28 Oct 2011 16:41|
|Last Modified: ||30 Dec 2013 01:20|
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