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Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy

Gimzewski, JK and Berndt, R and Schittler, R and McKinnon, AW and Welland, ME and Wong, TMH and Dumas, P and Gu, R and Syarkh, S and Salvan, F and Hallimaoui, A (1993) Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy. Applied Physics Letters, 62. pp. 786-788. ISSN 0003-6951

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:34
Last Modified: 30 Jun 2014 01:09
DOI:

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