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Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film transistors

Powell, MJ and Deane, SC and Milne, WI (1992) Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film transistors. Applied Physics Letters, 60. pp. 207-209. ISSN 0003-6951

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 09 Dec 2016 17:28
Last Modified: 30 Apr 2017 22:33
DOI: