Powell, MJ and Deane, SC and Milne, WI (1992) Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film transistors. Applied Physics Letters, 60. pp. 207-209. ISSN 0003-6951
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:41 |
| Last Modified: | 27 May 2013 01:20 |
| DOI: | 10.1063/1.106965 |
Actions (login required)
| View Item |
