CUED Publications database

A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions

Hayama, H and Milne, WI (1990) A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions. Solid-State Electronics, 33. pp. 279-286. ISSN 0038-1101

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 15 Dec 2015 12:47
Last Modified: 05 May 2016 05:36
DOI: 10.1016/0038-1101(90)90167-D