Hayama, H and Milne, WI (1990) A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions. Solid-State Electronics, 33. pp. 279-286. ISSN 0038-1101
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:41 |
| Last Modified: | 11 Mar 2013 02:05 |
| DOI: | 10.1016/0038-1101(90)90167-D |
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