CUED Publications database

A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions

Hayama, H and Milne, WI (1990) A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions. Solid-State Electronics, 33. pp. 279-286. ISSN 0038-1101

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Item Type: Article
Subjects: UNSPECIFIED
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Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:29
Last Modified: 01 May 2015 18:53
DOI: 10.1016/0038-1101(90)90167-D