Hayama, H and Milne, WI (1990) A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions. Solid-State Electronics, 33. pp. 279-286. ISSN 0038-1101Full text not available from this repository.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
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|Date Deposited:||15 Dec 2015 12:47|
|Last Modified:||05 May 2016 05:36|