CUED Publications database

A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions

Hayama, H and Milne, WI (1990) A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions. Solid-State Electronics, 33. pp. 279-286. ISSN 0038-1101

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:34
Last Modified: 17 Mar 2014 14:31
DOI: 10.1016/0038-1101(90)90167-D

Actions (login required)

View Item