CUED Publications database

A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions

Hayama, H and Milne, WI (1990) A new poly-silicon MOS transistor model which includes the effects of bulk trap states in grain boundary regions. Solid-State Electronics, 33. pp. 279-286. ISSN 0038-1101

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 18 May 2016 19:09
Last Modified: 01 Jul 2016 02:08
DOI: 10.1016/0038-1101(90)90167-D