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The effect of annealing on PECVD SiOx thin films made from N20:SiH4:He gas mixtures

Amaratunga, GAJ and Milne, WI and Clay, KJ and Putnis, A (1989) The effect of annealing on PECVD SiOx thin films made from N20:SiH4:He gas mixtures. Singapore Journal of Physics, 6. pp. 29-38. ISSN 0217-4251

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 18 May 2016 18:38
Last Modified: 30 May 2016 06:35
DOI: