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The effect of annealing on PECVD SiOx thin films made from N20:SiH4:He gas mixtures

Amaratunga, GAJ and Milne, WI and Clay, KJ and Putnis, A (1989) The effect of annealing on PECVD SiOx thin films made from N20:SiH4:He gas mixtures. Singapore Journal of Physics, 6. pp. 29-38. ISSN 0217-4251

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Item Type: Article
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Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:14
Last Modified: 31 Aug 2015 07:56
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