Dharmawardana, KGP and Amaratunga, GAJ (2000) Modeling of high current density trench gate MOSFET. IEEE T ELECTRON DEV, 47. pp. 2420-2428. ISSN 0018-9383
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | inversion channel mobility modeling MOSFET trench gate POWER MOSFET |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 17 Jul 2017 19:48 |
| Last Modified: | 13 Apr 2021 07:35 |
| DOI: |
