Dharmawardana, KGP and Amaratunga, GAJ (2000) Modeling of high current density trench gate MOSFET. IEEE T ELECTRON DEV, 47. pp. 2420-2428. ISSN 0018-9383
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | inversion channel mobility modeling MOSFET trench gate POWER MOSFET |
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron job |
| Date Deposited: | 04 Feb 2015 22:28 |
| Last Modified: | 05 Feb 2015 00:39 |
| DOI: |
