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1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

Udrea, F and Chan, SSM and Thomson, S and Trajkovic, T and Waind, PR and Amaratunga, GAJ and Crees, DE (1999) 1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance. IEEE ELECTR DEVICE L, 20. pp. 428-430. ISSN 0741-3106

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 18 May 2016 18:37
Last Modified: 26 Jul 2016 23:50
DOI: