Udrea, F and Chan, SSM and Thomson, S and Trajkovic, T and Waind, PR and Amaratunga, GAJ and Crees, DE (1999) 1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance. IEEE ELECTR DEVICE L, 20. pp. 428-430. ISSN 0741-3106
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 08 Nov 2011 12:46 |
| Last Modified: | 11 Mar 2013 02:02 |
| DOI: |
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