CUED Publications database

1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

Udrea, F and Chan, SSM and Thomson, S and Trajkovic, T and Waind, PR and Amaratunga, GAJ and Crees, DE (1999) 1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance. IEEE ELECTR DEVICE L, 20. pp. 428-430. ISSN 0741-3106

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:54
Last Modified: 03 Sep 2015 08:32
DOI: