Rashid, SJ and Tajani, A and Twitchen, DJ and Coulbeck, L and Udrea, F and Butler, T and Rupesinghe, NL and Brezeanu, M and Isberg, J and Garraway, A and Dixon, M and Balmer, RS and Chamund, D and Taylor, P and Amaratunga, GAJ (2008) Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis. IEEE T ELECTRON DEV, 55. pp. 2744-2756. ISSN 0018-9383
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Diamond numerical parameterisation Schottky diodes semiconductor device modeling. IONIZATION RATES CARRIER MOBILITY SILICON FILMS DIODES |
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron job |
| Date Deposited: | 04 Feb 2015 22:31 |
| Last Modified: | 05 Feb 2015 00:44 |
| DOI: | 10.1109/TED.2008.2003225 |
