CUED Publications database

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Rashid, SJ and Tajani, A and Twitchen, DJ and Coulbeck, L and Udrea, F and Butler, T and Rupesinghe, NL and Brezeanu, M and Isberg, J and Garraway, A and Dixon, M and Balmer, RS and Chamund, D and Taylor, P and Amaratunga, GAJ (2008) Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis. IEEE T ELECTRON DEV, 55. pp. 2744-2756. ISSN 0018-9383

Full text not available from this repository.
Item Type: Article
Uncontrolled Keywords: Diamond numerical parameterisation Schottky diodes semiconductor device modeling. IONIZATION RATES CARRIER MOBILITY SILICON FILMS DIODES
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:27
Last Modified: 06 Oct 2014 01:20
DOI: 10.1109/TED.2008.2003225