Rashid, SJ and Tajani, A and Twitchen, DJ and Coulbeck, L and Udrea, F and Butler, T and Rupesinghe, NL and Brezeanu, M and Isberg, J and Garraway, A and Dixon, M and Balmer, RS and Chamund, D and Taylor, P and Amaratunga, GAJ (2008) Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis. IEEE T ELECTRON DEV, 55. pp. 2744-2756. ISSN 0018-9383
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Diamond numerical parameterisation Schottky diodes semiconductor device modeling. IONIZATION RATES CARRIER MOBILITY SILICON FILMS DIODES |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 08 Nov 2011 12:46 |
| Last Modified: | 20 May 2013 01:39 |
| DOI: | 10.1109/TED.2008.2003225 |
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