Jang, JE and Cha, SN and Choi, YJ and Kang, DJ and Butler, TP and Hasko, DG and Jung, JE and Kim, JM and Amaratunga, GAJ (2008) Nanoscale memory cell based on a nanoelectromechanical switched capacitor. NAT NANOTECHNOL, 3. pp. 26-30. ISSN 1748-3387
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | FIELD-EFFECT TRANSISTORS RANDOM-ACCESS MEMORY CHEMICAL-VAPOR-DEPOSITION WALLED CARBON NANOTUBES SINGLE SILICON GROWTH |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 20 Jan 2012 05:11 |
| Last Modified: | 17 Jun 2013 01:08 |
| DOI: | 10.1038/nnano.2007.417 |
Actions (login required)
| View Item |
