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High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

Cha, SN and Jang, JE and Choi, Y and Amaratunga, GAJ and Ho, GW and Welland, ME and Hasko, DG and Kang, DJ and Kim, JM (2006) High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes. APPL PHYS LETT, 89. -. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: CHEMICAL-VAPOR-DEPOSITION THIN-FILM TRANSISTORS CARBON NANOTUBE FABRICATION
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 04 Nov 2011 15:52
Last Modified: 20 May 2013 01:40
DOI: 10.1063/1.2416249

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