CUED Publications database

High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

Cha, SN and Jang, JE and Choi, Y and Amaratunga, GAJ and Ho, GW and Welland, ME and Hasko, DG and Kang, DJ and Kim, JM (2006) High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes. APPL PHYS LETT, 89. -. ISSN 0003-6951

Full text not available from this repository.
Item Type: Article
Uncontrolled Keywords: CHEMICAL-VAPOR-DEPOSITION THIN-FILM TRANSISTORS CARBON NANOTUBE FABRICATION
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 15 Dec 2015 13:16
Last Modified: 09 Feb 2016 22:57
DOI: 10.1063/1.2416249