CUED Publications database

High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

Cha, SN and Jang, JE and Choi, Y and Amaratunga, GAJ and Ho, GW and Welland, ME and Hasko, DG and Kang, DJ and Kim, JM (2006) High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes. APPL PHYS LETT, 89. -. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: CHEMICAL-VAPOR-DEPOSITION THIN-FILM TRANSISTORS CARBON NANOTUBE FABRICATION
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:23
Last Modified: 03 Sep 2015 21:12
DOI: 10.1063/1.2416249